Nano-CMOS Circuit and Physical Design.
Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength...
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Author / Creator: | |
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Other Authors / Creators: | Mittal, Anurag. Cao, Yu. Starr, Greg W. Starr, Greg W. |
Format: | eBook Electronic |
Language: | English |
Edition: | 1st ed. |
Imprint: | Hoboken : John Wiley & Sons, Incorporated, 2004. |
Series: | IEEE Press Ser.
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Subjects: | |
Local Note: | Electronic reproduction. Ann Arbor, Michigan : ProQuest Ebook Central, 2022. Available via World Wide Web. Access may be limited to ProQuest Ebook Central affiliated libraries. |
Online Access: | Click to View |
Table of Contents:
- Foreword
- Preface
- 1. Nano-Cmos Scaling Problems And Implications
- 1.1. Design Methodology in the Nano-CMOS Era
- 1.2. Innovations Needed to Continue Performance Scaling
- 1.3. Overview of Sub-100-nm Scaling Challenges and Subwavelength Optical Lithography
- 1.4. Process Control and Reliability
- 1.5. Lithographic Issues and Mask Data Explosion
- 1.6. New Breed of Circuit and Physical Design Engineers
- 1.7. Modeling Challenges
- 1.8. Need for Design Methodology Changes
- 1.9. Summary
- References
- Part I. Process Technology And Subwavelength Optical Lithography: Physics, Theory Of Operation, Issues, And Solutions
- 2. Cmos Device And Process Technology
- 2.1. Equipment Requirements for Front-End Processing
- 2.2. Front-End-Device Problems in CMOS Scaling
- 2.3. Back-End-of-Line Technology
- References
- 3. Theory And Practicalities Of Subwavelength Optical Lithography
- 3.1. Introduction and Simple Imaging Theory
- 3.2. Challenges for the 100-nm Node
- 3.3. Resolution Enhancement Techniques: Physics
- 3.4. Physical Design Style Impact on RET and OPC Complexity
- 3.5. The Road Ahead: Future Lithographic Technologies
- References
- Part II. Process Scaling Impact On Design
- 4. Mixed-Signal Circuit Design
- 4.1. Introduction
- 4.2. Design Considerations
- 4.3. Device Modeling
- 4.4. Passive Components
- 4.5. Design Methodology
- 4.6. Low-Voltage Techniques
- 4.7. Design Procedures
- 4.8. Electrostatic Discharge Protection
- 4.9. Noise Isolation
- 4.10. Decoupling
- 4.11. Power Busing
- 4.12. Integration Problems
- 4.13. Summary
- References
- 5. Electrostatic Discharge Protection Design
- 5.1. Introduction
- 5.2. ESD Standards and Models
- 5.3. ESD Protection Design
- 5.4. Low-C ESD Protection Design for High-Speed I/O
- 5.5. ESD Protection Design for Mixed-Voltage I/O
- 5.6. SCR Devices for ESD Protection
- 5.7. Summary
- References
- 6. Input/Output Design
- 6.1. Introduction
- 6.2. I/O Standards
- 6.3. Signal Transfer
- 6.4. ESD Protection
- 6.5. I/O Switching Noise
- 6.6. Termination
- 6.7. Impedance Matching
- 6.8. Preemphasis
- 6.9. Equalization
- 6.10. Conclusion
- References
- 7. DRAM
- 7.1. Introduction
- 7.2. DRAM Basics
- 7.3. Scaling the Capacitor
- 7.4. Scaling the Array Transistor
- 7.5. Scaling the Sense Amplifier
- 7.6. Summary
- References
- 8. Signal Integrity Problems In On-Chip Interconnects
- 8.1. Introduction
- 8.2. Interconnect Parasitics Extraction
- 8.3. Signal Integrity Analysis
- 8.4. Design Solutions for Signal Integrity
- 8.5. Summary
- References
- 9. Ultralow Power Circuit Design
- 9.1. Introduction
- 9.2. Design-Time Low-Power Techniques
- 9.3. Run-Time Low-Power Techniques
- 9.4. Technology Innovations for Low-Power Design
- 9.5. Perspectives for Future Ultralow-Power Design
- References
- Part III. Impact Of Physical Design On Manufacturing/Yield And Performance
- 10. Design For Manufacturability
- 10.1. Introduction
- 10.2. Comparison of Optimal and Suboptimal Layouts
- 10.3. Global Route DFM
- 10.4. Analog DFM
- 10.5. Some Rules of Thumb
- 10.6. Summary. References
- 11. design For Variability
- 11.1. Impact of Variations on Future Design
- 11.2. Strategies to Mitigate Impact Due to Variations
- 11.3. Corner Modeling Methodology for Nano-CMOS Processes
- 11.4. New Features of the BSIM4 Model
- 11.5. Summ